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Samsung is now the first company to successfully demonstrate MRAM tech



Featured Image by AnandTech

Samsung has announced that they have become the world’s first company to demonstrate the Magnetoresistive random access memory tech for in memory computing. (Well, this certainly sounds hi-tech) Samsung also released a paper for the same titled “A Crossbar array of Magneto resistive memory devices for in Memory Computing”

Data is normally stored in DRAM for quick access for the CPU. MRAM just changes this. MRAM changes it all and combines data storage and computing, letting both things happened on the same chip, which allows it to be a lot faster than what we could realistically achieve before. Why does it become faster? It’s because there is no need to transfer data from the memory to the processor and back. And trust me, this really speeds things up.

Also, there are a lot of power savings included since data processing happens in very much a parallel manner inside the memory. This demonstration is a very much Big breakthrough because while other memory computing solutions like PRAM or RRAM Have been demoed, Real working MRAM has been very difficult to achieve due to its low resistance. It is also impossible to use MRAM’s power efficiency advantage in a single in memory computing architecture so that was hard and samsung did manage to break boundaries.

Well, This solution was tested by many AI applications and it did offer 98% accuracy in the classification of handwritten digits in 93% accuracy in detecting faces and images. Samsung does say that MRAM tech can be used for AI processing and to make highly power efficient AI chips.

Hey, imagine this. Facebook’s entire AI supercomputer thing combined with Samsung’s MRAM technology, These companies together could make the entire world go in Shock. Well, let’s just an imagination thing, Could be a possibility or maybe not, we never know.

Samsung is now the first company to successfully demonstrate MRAM tech

Samsung is now the first company to successfully demonstrate MRAM tech


Featured Image by AnandTech

Samsung has announced that they have become the world’s first company to demonstrate the Magnetoresistive random access memory tech for in memory computing. (Well, this certainly sounds hi-tech) Samsung also released a paper for the same titled “A Crossbar array of Magneto resistive memory devices for in Memory Computing”

Data is normally stored in DRAM for quick access for the CPU. MRAM just changes this. MRAM changes it all and combines data storage and computing, letting both things happened on the same chip, which allows it to be a lot faster than what we could realistically achieve before. Why does it become faster? It’s because there is no need to transfer data from the memory to the processor and back. And trust me, this really speeds things up.

Also, there are a lot of power savings included since data processing happens in very much a parallel manner inside the memory. This demonstration is a very much Big breakthrough because while other memory computing solutions like PRAM or RRAM Have been demoed, Real working MRAM has been very difficult to achieve due to its low resistance. It is also impossible to use MRAM’s power efficiency advantage in a single in memory computing architecture so that was hard and samsung did manage to break boundaries.

Well, This solution was tested by many AI applications and it did offer 98% accuracy in the classification of handwritten digits in 93% accuracy in detecting faces and images. Samsung does say that MRAM tech can be used for AI processing and to make highly power efficient AI chips.

Hey, imagine this. Facebook’s entire AI supercomputer thing combined with Samsung’s MRAM technology, These companies together could make the entire world go in Shock. Well, let’s just an imagination thing, Could be a possibility or maybe not, we never know.